Samsung today announced the industry's first mass production of its 30nm class, 32Gb (that's gigabit, not gigabyte), multi-level-cell (MLC) NAND memory with an an asynchronous DDR interface.
"With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices," said Soo-In Cho, executive vice president and general manager of the Memory Division on Samsung.
According to Samsung, its DDR NAND chips will significantly improve read performance of mobile devices. The chips come capable of 133Mbps reads, and would replace SDR MLC NAND chips with read performance hovering around 40Mbps.
The company said its new chips can be used in SSDs for PCs, premium SD memory cards for smartphones, and in Samsung's proprietary moviNAND memory.