OCZ joins a growing number of memory makers who have released high frequency triple channel DDR3 kits with the company's new Blade series. So far only announced in 6GB capacity, OCZ's tri-channel DDR3-2000 boasts 7-8-7-20 timings at 1.65V, cooled by a redesigned "pure aluminum heatsink" and backed by a lifetime warranty.
"Using a triple channel configuration custom tailored towards Intel’s Core i7 platform, the latest OCZ Blade Series kits epitomize the pinnacle of memory technology by delivering 2000MHz data rate for an available bandwidth of 35GB/sec to satisfy even the most data-hungry processor in the current marketplace," commented Dr. Michael Schuette, VP of Technology Development at OCZ.
OCZ says its new Blade 2000 modules will be shown at CES next month before being made available shortly afterwards. The company also claims each Blade 2000 kit is 100 percent hand tested for quality assurance and compatibility with Intel's Core i7 platform.
Enthusiasts looking to piece together a high end system probably don't even have A-Data on their radar, a company best known for offering budget priced modules designed for general purpose computing. Perhaps looking to make new friends among overclocking circles, A-Data this week launched its XPG DDR3-2133X v2.0 memory in both dual- and tri-channel form.
As a tri-channel kit, DDR3-2133 ranks as the highest frequency currently available. Even more impressive, it's available in both 3GB (3x1GB) and 6GB (3x2GB) configurations, not just 3GB. It looks as though some concessions have to be made in order to reach 2133MHz in tri-channel form, as both kits run comparatively loose at 10-10-10-30 and require between 2.05V - 2.15V.
In order to accommodate the high voltage requirement, the new kit comes with a dual-fan heatsink for active cooling. The dual-fan cooler also adds a touch of bling with a pair of blue LEDs.
Research in transparent electronic devices isn't anything new, but for the first time (that we're aware of), a group of scientists have created what they say is an "almost completely clear" computer chip. Credit goes to the Advanced Institute of Science and Technology (KAIST) team responsible for creating the see-through transparent resistive random access memory (TRRAM) based on maturing RRAM technology. RRAM technology is currently being developed by companies like Fujitsu, Samsung, Micron, and Spansion as a non-volatile memory technology that will attempt to replace flash, TGDaily says.
The KAIST team said its TRRAM device is based on an ITO (indium tim oxide)/ZnO/ITO capacitor structure with a transmittance of 81 percent in the visible region of the chip. Creating the chip consisted of essentially sandwiching the RRAM's metal oxide materials between equally transparent electrodes and substrates, which gives the chip its transparency. According to the researchers, the chip is capable of retaining data for 10 years.
There hasn't been a ton of interest in clear electronics up to this point, but the KAIST team is hopeful their discovery might change that. Eventually, the technology could enable the development of clear computer monitors and TVs that are embedded inside glass.
OCZ's making a pitch for its new Slate Series ExpressCard, a storage expansion drive the company claims is better suited than USB flash devices and external hard drives.
Compatible with USB 2.0
18 MB/sec read
12.5 MB/sec write
Voltage: 2.7V - 3.6V
The new ExpressCard storage drives aren't going to win any speed crowns, so OCZ is touting convenience and low power consumption over alternative backup solutions. Users who don't like to lug around external hard drives or who are prone to bumping into USB keys sticking out of a notebook may find appeal in an ExpressCard that stays put and out of the way.
Specific pricing and availability has not yet been announced, though OCZ did say its new Slate Series will come in 8GB, 16GB, and 32GB capacities.
Late last week Team Group launched 3GB (3x1GB) and 6GB (3x2GB) capacity kits in DDR3-1333, DDR3-1600, and DDR3-1866 form. Team Group wasn't the first to offer tri-channel memory kits for Intel's new Core i7 platform, but for the time being, the company is claiming it has the "market-fastest" modules around
DDR3-1333, 7-7-7-21-2T, 1.5V-1.6V
DDR3-1600, 8-8-8-24-2T, 1.65V
DDR3-1866, 9-9-9-24-2T, 1.65V
It's worth noting that at least one other memory company offers tri-channel memory rated at DDR3-1866. Corsair's high frequency kit lists the same latency timings and voltage requirement as Team Group's does, but this doesn't necessarily contradict the company's 'market-fastest' claim. Team Group's Xtreem DDR3-1866 memory does qualify as the highest frequency kits yet available, they're just not alone at the top.
Team Group, a company not as widely known in casual circles as some of the more commonly marketed brands, often targets the overclocking crowd. The company touts an extensive binning process on its high performance RAM, requiring that all modules pass a 24-hour burn-in test on "major overclocking motherboards from Asus and Gigabyte."
So much for boasting the 'market-fastest' tri-channel kit. That distinction belongs to Kingston, who's tri-channel DDR3-2000 kit was released on October 29, 2008.
One of the concerns in the transition to Core i7-based platforms was how Intel's new chips would fare with DDR3 memory exceeding 1.65V. Early reports warned that the higher voltage kits might potentially pose a risk to the processor, prompting memory makers to focus on triple-channel kits with lower voltage than their dual-channel counterparts. But voltage restrictions could become even less of a concern now that Elpida has completed its development of a 50nm process DDR3 SDRAM.
Elpida claims its new DRAM features the lowest power consumption in the industry, requiring as little as 1.2V, making them good candidates for eco-conscious server environments and data centers. The 2.5Gbps-capable chips can also operate at 1.5V and Elpida says initial applications will include high-end desktops.
Mass production of the 50nm chips is scheduled to being in Q1 2009.
Earlier this year, a jury ruled that Rambus, a designer and licensor of memory chips, did not obtain patents for memory technology through fraud or anti-competitive means. The ruling essentially gave Rambus the right to continue its practice of suing anyone and everyone involved in memory production that isn't already paying the company royalties.
Among those companies are Samsung, the world's largest memory-chip maker, Hynix, the second largest memory chip producer, Micron, and Nanya. And each of them will have to defend against claims of wrongdoing as Rambus has won a pretrial ruling alleging chipmakers infringed on one claim of a patent in a case scheduled to go to trial on January 19, 2009.
According to Jeff Schreiner, an analyst at San Diego-based Capstone Investments, the ruling by U.S. District Judge Ronald Whyte means that Whyte "already found one claim for Rambus that they won't have to argue." In the past, Whyte has denied Rambus' requests for similar pretrial rulings over 10 other elements of its patents. Those previous claims, which cover alleged infringement on both DDR2 and DDR3 technology, will also be argued during the January trial.
Hynix this week double-dipped into the record books by introducing the world's first and fastest 1 Gigabit GDDR5 graphics DRAM operating at 7Gb/s, a 40 percent improvement over 5Gb/s GDDR5. The new memory is built using a 54nm process and can process up to 28GB/s with a 32-bit I/O, the company claims. On a 512-bit memory bus, bandwidth should reach as high as 448GB/s.
In addition to speed, Hynix also emphasized power consumption. The new memory requires just 1.35V as opposed to 1.5V inherent in previous generation GDDR5 memory. This means that the improved GDDR5 not only bodes well for future high performance videocards, but the potential for lower heat and longer battery life could also be a boon for notebooks.
Hynix says its 1Gb GDDR5 graphics memory meets the JEDEC standard and plans to start volume production in the first half of 2009.
Dual-channel memory might not be dead, but Intel's Core i7 platform has kicked off the era of triple-channel memory kits and most manufacturers have already jumped on board. Enter Mushkin, who not only is making tri-channel DDR3 kits available, but has launched 16 different models ranging in speed from 1066MHz to 1600MHz.
998674 – 3GB (3x1GB) XP3-10666 6-6-6-18 1.65V
998675 – 6GB (3x2GB) XP3-10666 6-6-6-18 1.65V
998676 – 3GB (3x1GB) HP3-10666 7-7-7-20 1.5-1.6V
998677 – 6GB (3x2GB) HP3-10666 7-7-7-20 1.5-1.6V
998583 – 3GB (3x1GB) EM3-10666 9-9-9-24 1.5V
998585 – 6GB (3x2GB) EM3-10666 9-9-9-24 1.5V
998678 – 3GB (3x1GB) XP3-12800 7-8-7-20 1.65V
998679 – 6GB (3x2GB) XP3-12800 7-8-7-20 1.65V
998680 – 3GB (3x1GB) XP3-12800 8-8-8-24 1.6-1.65V
998681 – 6GB (3x2GB) XP3-12800 8-8-8-24 1.6-1.65V
998658 – 3GB (3x1GB) HP3-12800 9-9-9-27 1.5-1.6V
998659 – 6GB (3x2GB) HP3-12800 9-9-9-27 1.5-1.6V
998682 – 3GB (3x1GB) HP3-8500 6-6-6-18 1.5-1.6V
998683 – 6GB (3x2GB) HP3-8500 6-6-6-18 1.5-1.6V
998570 – 3GB (3x1GB) EM3-8500 7-7-7-20 1.5V
998571 – 6GB (3x2GB) EM3-8500 7-7-7-20 1.5V
"We’ve worked diligently to create parts for the Core i7 platform that push specifications to unprecedented levels while maintaining the high quality and reliability standards of our existing products," said Brian Flood, director of product development for Mushkin. "Our triple-pack customers will be rewarded with the utmost reliability from our standard rated products, and greatly increased performance from our high performance line."
Mushkin claims that each kit is hand-tested beyond its rated specification, suggesting at least a modicum of overclocking headroom. Each of the 16 kits also come bearing Mushkin's FrostByte heatspreader.
The DRAM industry is facing its toughest time in the past 15 years with not much of a light at the end of the tunnel. Most memory companies have already reduced production and scaled back the workforce, but it has done little to change the fact that DRAM prices have already dropped close to cost. Could a government bailout be the answer?
That's exactly what ProMOS chairman ML Chen wants to see happen. Chen, whose company has already suffered losses adding up to US$675 million in the first three quarters of 2008, is calling for the Taiwan government to keep the industry afloat. Total losses for the entire industry currently sit at US$2.73 billion, a number which is expected to grow in the fourth quarter.
Chen, who said it would be a pity of the government gave up on DRAM makers who have given so much to the nation's semiconductor industry, would like to see some fundamental changes occur, like the development of home-grown technologies. Chen also said that the government should offer aid programs and restricted bank loans, which could only be used for technological research and development and not for capacity expansion.
Should the Taiwan government step in? Hit the jump and post your thoughts.