Samsung and Sun Collaborate to Develop High Endurace Flash Memory

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Solid-State Drives (SSDs) are taking aim at the mainstream market, boasting both faster speeds and suddenly affordable pricing than even just a few short months ago. But even as the price-to-performance ratio becomes much more attractive, reliability remains a concern. Flash memory doesn't contain any moving parts, but the memory is only capable of so many write and erase cycles before it turns into read only memory. That might soon change.

Samsung and Sun Microsystems are co-developing a single-level-cell NAND flash memory device the companies claim will offer "much higher endurance levels than any other flash memory device on the market today." The new memory is said to offer five times the data write-and-erase cycles of existing solutions. Even more impressive, Samsung claims its server-grade SLC memory will provide a 100-fold increase in the number of data transfers over traditional hard drives.

While Samsung and Sun are excited over where flash memory is headed, not everyone shares their same enthusiasm. A Fujitsu executive recently downplayed SSDs saying the technology is still over two years away from being a viable option, and an IDC report indicates that initial comparisons between SSDs and HDDs may have been misleading.

Are we getting close to finally replacing hard drives as the main storage device in today's PCs, or is the recent hype much ado about nothing?

Image Credit: Samsung and Sun

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