Sport & Auto
- About Future
- Digital Future
- Cookies Policy
- Terms & Conditions
- Investor Relations
- Contact Future
The desktop isn't the only place you'll find interesting things happening with double data rate-4 (DDR4) memory. Samsung this week said it has begun mass producing what it claims is the industry's first 64GB DDR4 RDIMMs using three dimensional "through silicon via" (TSV) package technology intended for enterprise servers, cloud-based applications, and other data center solutions.
Sounds pretty fancy, right? Let us break it down. The new RDIMMs employ 36 DDR4 DRAM chips, each of which consists of 4-gigabit (Gb) DDR4 DRAM dies. They're built using Samsung's 20nm-class and 3D TSV package technologies, the latter of which marks a new milestone in memory technology.
Following in the footsteps of 3D Vertical NAND (V-NAND) that uses high-rise vertical structures of cell arrays inside a monolithic die, 3D TSV is a different type of structure that vertically interconnects stacked dies. To build a 3D TSV DRAM package, the DDR4 dies must first be ground down as thin as just a few micrometers, then pierced with hundreds of tiny holes. Electrodes pass through the fine holes to vertically connect the dies.
According to Samsung, its new 64GB TSV module performs twice as fast as a 64GB module using wire bonding packaging, and consumes around half the power to boot.