Mobile DRAM will soon become the most popular type of DRAM around
Samsung is closing out the year by introducing what it claims is the industry's first 8-gigabit (Gb), low power double data rate 4 (LPDDR4), mobile DRAM built a on 20nm-class manufacturing process technology. Using the new chips, DRAM players can cram 1 gigabyte (GB) on a single die, which is the largest density available for DRAM components today, Samsung says. The chips are also fast and power efficient.
According to Samsung, the new LPDDR4 interface provides 50 percent higher performance than even the fastest LPDDR3 or DDR3 memory interfaces, and it does it while consuming around 40 percent less energy at just 1.1 volts. This combination of speed and power efficiency will translate into faster, more responsible applications, advanced features, and even higher resolution displays, all while maximizing battery life.
"This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner."
Samsung's 8Gb LPDDRD4 uses a new Low Voltage Swing Terminated Logic (LVSTL) I/O interface that the company originally submitted to JEDEC and has since become a standard specification for LPDDR4 DRAM. This interface will enable a data transfer rate per pin of 3,200 megabits per second (Mbps), or twice that of the 20nm-class LPDDR3 DRAM that's now in mass production.
What this means for end users is that device makers can start building premium mobile products such as large screen UHD 4K smartphones, tablets, and ultra-slim notebooks.