Toshiba announced it has enhanced its NAND flash portfolio with new embedded NAND flash memory devices that feature toggle-mode DDR NAND for improved performance. These higher performing 24nm e-MMC devices wedge open the bottlenecks typically associated with single data rate NAND, enabling faster random access and sequential performance. The icing on the cake is that they're cheaper to boot, a combination we'll take 8 days a week.
Densities range from 2GB to 128GB and feature the world's smallest geometry e-MMC, ranking as one of the highest capacities ever achieved in the industry, Toshiba says. On top of it all, these new embedded NAND devices offer full compliance with the JEDEC e-MMC 4.41 standard, which means less chance of compatibility headaches.
"The utilization of our new toggle-mode DDR NAND die at 64Gbit density is key to enabling our e-MMC to support the higher performance, and smaller, thinner packages that customers desire," noted Scott Beekman, senior business development manager, mobile communications memory for TAEC. "For example, our 128GB e-MMC can now be supported in a smaller 14 x 18 package, which many space conscious applications can support."
Those space conscious applications Mr. Beekman refers to include smartphones, tablets, eBook readers, digital cameras/camcorders, printers, servers, and POS (point-of-sale, not the other POS) systems.
Toshiba says it has already begun sampling 8GB, 16GB, 32GB, and 64GB 24nm e-MMC products and will kick off mass production in Q3. Samples of the 128GB capacity will start in 3Q, followed by mass production in 4Q.