Intel, Micron Announce Development of New High Capacity Flash Memory

Paul Lilly

Intel and Micron have developed a new 34nm NAND flash memory technology that is capable of 3 bits per cell, which allows for greater density than the standard 2 bits per cell technology currently in use, the two companies announced this week.. According to Micron, this will pave the way for high-capacity USB flash drives.

Micron also said the technology isn't yet as reliable as flash memory based on 2 bits per cell technology. Because of this, the 3 bits per cell chips will only be used in the manufacturer of flash drives that don't require the data storage reliability of an SSD.

"The chip is not for all markets," claims Jim Handy of semiconductor market researcher Objective Analysis. "The companies explained that they need more experience in production volumes before they will be confident to position it as a chip suitable for the high-write environment of the SSD."

Micron said the chips will be in mass production in the fourth quarter.

Image Credit: Micron via

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