Breakthrough in NAND Flash Memory Could Lead to 10GB/s SSD Writes

Paul Lilly

Today's blistering fast SSDs with read and write speeds approaching 300MB/s have nothing on what's in store for tomorrow. Thanks to a breakthrough in NAND flash memory technology, a Japanese research group says 9.5GB/s SSD writes are entirely possible.

The Cliff Notes version is that the research team found a way to reduce the operating voltage to 1V, resulting in power consumption that's 86 percent lower than existing NAND flash chips, while also overcoming what are called "write disturb" problems. The lower voltage makes it possible for parallel writing to occur on up to 110 NAND chips, or nearly 7 times more than existing NAND flash memory.

The research team calls the procedure the "single-cell self-boost" method, which "turns off two cells adjacent to the unchosen cells by applying a voltage of 1V from both ends of the bit line connected to the unchosen cells so that the channel of the unchosen cells is in the state of floating," as TechON! explains it.

Wrap your head around all the technical jargon here , and then sit back and hope we see this technology manifest itself before SSDs become obsolete.

Image Credit: TechON!

Around the web