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Back in February of this year, Samsung developed and validated its first 40nm DRAM chip, and now five months later, the chip maker announced it has begun mass producing 2Gb DDR3 using the smaller manufacturing process.
Samsung says the move to 40nm will provide around a 60 percent increase in production capacity over a 50nm process, and it won't all be relegated to the server market, according to news and rumor site DigiTimes. In addition to 16GB, 8GB, and 4GB RDIMMs for servers, Samsung will use the 40nm manufacturing process to build UDIMMs (unregistered in-line memory modules) for workstatios, desktops, and notebooks of up to 4GB.
The energy efficient chips support a data rate of up to 1.6Gbps at just 1.35V, double that of an 800Mbps 1Gb-based dual-die package.
Image Credit: Samsung via InformationWeek
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