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IBM this week announced that members of its Bulk Process Alliance -- Globalfoundris, Chartered Semiconductor, Sasmung Electronics, ST Microelectronics, Infineon Technologies -- have begun jointly developing 28nm, high-k metal gate, low-power bulk complementary metal oxide semiconductor process technology (forgot about saying that three times fast, try doing it just once!).
"Clients can begin their designs today in leadership 32nm HKMG technology and then transition to 28nm technology for density and power advantages, without the need for a major redesign," IBM said. "By assuring a path from 32nm to 28nm technology, this migration methodology offers clients lower risk, reduced cost, and faster time-to-market."
The move to 28nm is an important one that purports to provide 40 percent better performance than current 45nm parts, while also reducing power consumption by 20 percent. Moreover the HKMG technology offers better power leakage characteristics for longer battery life, which added altogether will be a boon for mobile devices.
Image Credit: IBM
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